Download Advanced simulation methods for ESD protection development by Harald Gossner PDF

By Harald Gossner

Simulation tools for ESD safeguard improvement appears to be like on the integration of recent ideas right into a entire improvement circulation, that is now to be had due advances made within the box throughout the fresh years. those findings let for an early, sturdy ESD idea at a truly early level of the know-how improvement, that's crucial now improvement cycles were lowered. The ebook additionally deals methods of accelerating the optimization and keep an eye on of the know-how bearing on functionality. hence making the method more economical and more and more efficientThis name presents a advisor throughout the most up-to-date learn and expertise featuring the ESD safeguard improvement method. this can be in keeping with a mixture of procedure, machine and circuit stimulation, and addresses the optimization of the serious factor, decreased improvement cycles.Written to handle the wishes of the ESD engineer, this article is needed studying through all practitioners and researchers and scholars inside of this box. the 1st wide assessment with reference to ESD simulation· Addresses the serious factor of decreased improvement cycles, and gives options· offers the newest study within the box with excessive sensible relevance and its effects

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Advanced simulation methods for ESD protection development

Simulation equipment for ESD safety improvement seems to be on the integration of recent suggestions right into a entire improvement circulate, that is now on hand due advances made within the box throughout the contemporary years. those findings permit for an early, good ESD suggestion at a really early level of the know-how improvement, that's crucial now improvement cycles were diminished.

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If the filamentation is very pronounced, as in well resistors, the very high current density in the filament leads to local melting and damage to the resistor (Khurana, 1966; Hower, 1970; Yang, 1993). e. the saturation) might not be achieved, because the high current density leads to a thermal overload before saturation can occur (Amerasekera, 1993). The influence of thermal effects can be investigated by varying the pulse duration. 1 Requirements for ESD protection of output cells In the simplest circuits, driver stages may be designed with only one P F E T to VDDP (VDDP = VDDPower) and one NFET with source to VSSB (VSSB = bulk potential).

Simulation of Complete CMOS I/O Circuit Response to CDM Stress", Proc. 20th EOS/ESD Symposium (1998), 259. , Electrostatic Discharge Control, Hayden, N J, 1983. , "Broadband Measurement of ESD Risetimes to Distinguish Between Different Discharge Mechanisms", Proc. 23rd EOS/ESD Symposium (2001), 373. , Principle of Optics, Cambridge University Press, England, 1980. , "Influence of the Device Package on the Results of CDM Tests Consequences for Tester Characterization and Test Procedure", Proc.

As soon as one of the fingers has triggered at Vtl, the voltage drops and this finger takes over the whole current. Usually, owing to minute differences in the doping profile or the gate control, not all fingers trigger at exactly the same voltage value. 3. 7: High-current I V characteristics of (a) N F E T and (b) P F E T devices. The parameters shown are relevant for the definition of an appropriate ESD protection concept. The drafts are not to scale. In general, the intrinsic ESD robustness of the P F E T is worse than the N F E T due to the lower snap-back with a higher resulting dissipated power.

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